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Defect Distribution and Bonding Structure in High Band Gap a-Si1−xCx:H Films Deposited in H2 Dilution

  • R. Galloni (a1), R. Rizzoli (a1), C. Summonte (a1), F. Demichelis (a2), F. Giorgis (a2), C. F. Pirri (a2), E. Tresso (a2), G. Ambrosone (a3), C. Catalanotti (a3), U. Coscia (a3), P. Rava (a4), G. Della Mea (a5), V. Rigato (a5), A. Madan (a6) and F. Zignani (a7)...

Abstract

AMorphous silicon carbide films were deposited by the PECVD technique in SiH4+CH4 gas mixtures at various CH4 flow rates with and without H2 dilution of the reactive Mixture. A detailed analysis of defect distribution in the gap has been performed by PDS and the results have been correlated with the structural (IR) and the compositional properties (RBS, ERDA). The effect of hydrogen dilution on the electronic properties of the films was investigated by dark and photo electrical conductivity Measurements.

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