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A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures

  • Gautam Ganguly (a1) and Akihisa Matsuda (a1)


The idea of surface mobility of growth precursors determined material quality has been exploited by raising the substrate temperature above the conventional 250°C and the ensuing thermal depletion of the surface hydrogen coverage compensated by increasing the precursor flux (deposition rate) to prepare ultra low defect density hydrogenated amorphous silicon.



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