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A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures

  • Gautam Ganguly (a1) and Akihisa Matsuda (a1)

Abstract

The idea of surface mobility of growth precursors determined material quality has been exploited by raising the substrate temperature above the conventional 250°C and the ensuing thermal depletion of the surface hydrogen coverage compensated by increasing the precursor flux (deposition rate) to prepare ultra low defect density hydrogenated amorphous silicon.

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