- Cited by 18
Ganguly, Gautam and Matsuda, Akihisa 1993. Defect formation during growth of hydrogenated amorphous silicon. Physical Review B, Vol. 47, Issue. 7, p. 3661.
Nishio, Hitoshi Ganguly, Gautam and Matsuda, Akihisa 1993. Reduction of the Defect Density in a-Si:H Deposited at ≤250°C. MRS Proceedings, Vol. 297, Issue. ,
Matsuda, Akihisa 1993. Current Topics in Amorphous Materials. p. 345.
Ganguly, Gautam Nishio, Hitoshi and Matsuda, Akihisa 1994. Reduction of the defect density in hydrogenated amorphous silicon by thermally energized growth precursors. Applied Physics Letters, Vol. 64, Issue. 26, p. 3581.
Hishikawa, Y. Ninomiya, K. Maruyama, E. Kuroda, S. Terakawa, A. Sayama, K. Tarui, H. Sasaki, M. Tsuda, S. and Nakano, S. 1994. Approaches for stable multi-junction a-Si solar cells. Vol. 1, Issue. , p. 386.
Dalai, Vikram L. Ping, E. X. Kaushal, Sanjeev Leonard, Mark Bhan, Mohan K. and Han, K. 1994. Growth of Amorphous Silicon Materials and Devices with Improved Stability. MRS Proceedings, Vol. 336, Issue. ,
Madan, Arun 1995. Plasma Deposition of Amorphous Silicon-Based Materials. p. 243.
Ganguly, G. Ikeda, T. Sakata, I. and Matsuda, A. 1996. Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H. MRS Proceedings, Vol. 420, Issue. ,
Ikeda, T. Ganguly, G. and Matsuda, A. 1996. Factors limiting further improvement of a-SiGe:H. p. 1157.
Suzaki, Y Shikama, T Yoshioka, S Yoshii, K and Yasutake, K 1997. Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering. Thin Solid Films, Vol. 311, Issue. 1-2, p. 207.
Matsuda, Akihisa 1997. Recent understanding of the growth process of amorphous silicon from a silane glow-discharge plasma. Plasma Physics and Controlled Fusion, Vol. 39, Issue. 5A, p. A431.
Kessels, W.M.M Severens, R.J van de Sanden, M.C.M and Schram, D.C 1998. Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H. Journal of Non-Crystalline Solids, Vol. 227-230, Issue. , p. 133.
Lubianiker, Yoram Tan, Yanyang Cohen, J. David and Ganguly, Gautam 1999. High Quality a-Si:H Films Grown at High Deposition Rates. MRS Proceedings, Vol. 557, Issue. ,
Sanden, M C M van de Kessels, W M M Severens, R J and Schram, D C 1999. Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon. Plasma Physics and Controlled Fusion, Vol. 41, Issue. 3A, p. A365.
Wirbeleit, F. 2000. A multi-variable analysis of the influence of process parameters on VHF PECVD deposition process for amorphous silicon. Journal of Non-Crystalline Solids, Vol. 262, Issue. 1-3, p. 207.
Lubianiker, Yoram Tan, Yanyang Cohen, J.David and Ganguly, Gautam 2000. Amorphous silicon deposited at high growth rates near the onset of microcrystallinity. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 450.
Korevaar, B.A Adriaenssens, G.J Smets, A.H.M Kessels, W.M.M Song, H.-Z van de Sanden, M.C.M and Schram, D.C 2000. High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 380.
Ganguly, G Oswald, R.S and Carlson, D.E 2004. Optimization of the stabilized performance of amorphous silicon solar cells deposited at high growth rates by de-coupling of gas and superstrate temperatures. Applied Surface Science, Vol. 221, Issue. 1-4, p. 13.
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The idea of surface mobility of growth precursors determined material quality has been exploited by raising the substrate temperature above the conventional 250°C and the ensuing thermal depletion of the surface hydrogen coverage compensated by increasing the precursor flux (deposition rate) to prepare ultra low defect density hydrogenated amorphous silicon.
Hide All1. Smith, Z.E., and Wagner, S., Phys. Rev. B, 32, 5510 (1985);Bar-Yam, Y., Adler, D., and Joannopoulous, J. D.; Phys. Rev. Lett. 57, 467 (1986).2. Street, R. A., Phys. Rev. B, 43, 2454 (1991).3. Matsuda, A., Koyama, M., Ikuchi, N., Imanishi, Y. and Tanaka, K., Jpn. J. Appl. Phys. 25, L54 (1986).4. Matsuda, A., Yagii, K., Koyama, M., Toyama, M., Yamanishi, Y., Ikuchi, N., and Tanaka, K., Appl. Phys. Lett. 47, 1061 (1985).5. Matsuda, A., Yamaoka, T., Koyama, M., Imanishi, Y., Kataoka, H., Matsuura, H., and Tanaka, K., J. Appl. Phys. 60, 4025 (1986).6. Guizot, J. -L., Nomoto, K., and Matsuda, A., Surf. Sci. 244, 22 (1991).7. Matsuda, A. and Goto, T., Mater. Res. Soc. Proc. 164, 3 (1989).8. Ganguly, G. and Matsuda, A. (communicated. 1991).9. Toyoshima, Y., Arai, K., Matsuda, A., and Tanaka, K., J. Non-Cryst. Solids 137/138, 765 (1991).
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