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Defect Creation by Forward Bias in Amorphous Silicon P-I-N Diodes

  • R. A. Street (a1) and M. Hack (a1)

Abstract

Metastable defects are induced in a-Si:H p-i-n devices by a forward bias current. The defect density increases approximately as the square root of time, reaching saturation at long inducing times, and with a weak temperature dependence. Current-induced defect annihilation is observed, in which the current causes a reduction in the previously induced defect density. Calculations of the changes in the forward bias current for different bulk defect densities are able to account for the measured results.

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7. see Hack, M. and Shaw, J.G., these proceedings

Defect Creation by Forward Bias in Amorphous Silicon P-I-N Diodes

  • R. A. Street (a1) and M. Hack (a1)

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