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Deep-level luminescence at 1.0 eV in 6H SiC

Published online by Cambridge University Press:  21 March 2011

B. Magnusson ,
A. Ellison ,
N. T. Son  and
E. Janzén
B. Magnusson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
A. Ellison
Affiliation:
Okmetic AB, Hans Meijers väg 2, SE-581 83 Linköping, Sweden
N. T. Son
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
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Abstract

Results from photoluminescence (PL) and Zeeman effect measurements of a PL center, labeled UD-1, in 6H SiC are presented. The spectrum consists of three no phonon-lines (NPLs) at 0.9952, 1.0015 and 1.0020 eV. The luminescence starts decreasing in intensity above 40 K and is completely quenched at 80 K. The observed Zeeman splitting reveals a spin one half of the ground state of the two highest energy lines. No splitting of the 0.9952 eV line is detected. The g║-value for the 1.0015 eV and 1.0020 e║ lines are g║ = 1:4 and g║ = 1:7, respectively. For both lines, g⊥ = 0. The C3v symmetry indicates that the UD-1 center is either a substitutional defect or a complex with its constituents lying along the c-axis of the lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.11
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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