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Deep-Level Defects in Electron Irradiated 6H-SiC

  • Michal Sebastian Kozubal (a1), Pawel Kaminski (a2), Stanislaw Warchol (a3), Katarzyna Racka-Dzietko (a4), Krzysztof Grasza (a5) and Emil Tymicki (a6)...

Abstract

An effect of electron irradiation on the concentrations of deep-level centers in C-rich and Si-rich 6H-SiC wafers is investigated. In the former material, the main deep-level centers with activation energies of Ec -0.50, Ec -0.64 and Ec -0.67 eV are found to be related to dicarbon interstitials and CiNC complexes located in hexagonal and quasi-cubic lattice sites, respectively. In the latter material, the dicarbon interstitials are dominant after the irradiation with 1.5-MeV electrons. At the energy of bombarding electrons equal to 0.3 and 0.7 MeV, the activation energies of the dominant deep-level centers are Ec -0.38 and Ec -0.52 eV, respectively. The first center is related to carbon vacancies and the second to silicon interstitials.

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Deep-Level Defects in Electron Irradiated 6H-SiC

  • Michal Sebastian Kozubal (a1), Pawel Kaminski (a2), Stanislaw Warchol (a3), Katarzyna Racka-Dzietko (a4), Krzysztof Grasza (a5) and Emil Tymicki (a6)...

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