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Deep Levels and Drift Mobility Measurements in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

E. A. Schiff ,
M. A. Parker  and
K. A. Conrad
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130 USA
M. A. Parker
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130 USA
K. A. Conrad
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130 USA
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Abstract

Drift-mobility measurements in undoped amorphous hydrogenated silicon (a-Si:H) are reviewed with emphasis on the effects of deep levels (principally the D or dangling bond defect) on the electron drift mobility. An outline of several techniques for measuring drift mobilities is also given to establish their relationships to the transient drift-mobility function. µ(t). Three aspects of the electron µ(t) in undoped a-Si:H are described in detail: (i) anisotropy at long times, requiring a distinction between axial electric fields (parallel to the growth axis) and planar fields normal to it, (ii) the D center deep-trapping cutoff observed in the axial µ(t), and (iii) D center multiple-trapping at long times in the planar drift-mobility. Microstructure effects which might account for the electron drift-mobility are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 477
Copyright
Copyright © Materials Research Society 1988

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