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Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

  • Yuri A. Stotski (a1), Igor O. Usov (a1) and Alexander V. Suvorov (a2)

Abstract

Deep levels in 6H-SiC wafers implanted with Al+ ions at high-temperature were studied using current deep level transient spectroscopy (iDLTS). Aluminum was implanted at a temperature of 1800 °C with an energy of 40 keV and a dose of 2 × 1016 cm−2 into n-type epitaxial layers with different carrier concentration. Four levels were found, at Ec−0.12, Ec−0.13, Ec−1.06 and Ev+0.35 eV. It was established that modification of the carrier concentration in original ntype 6H-SiC epitaxial layers affects the deep levels concentration. The relationship between the thickness of the space charge region and the relative deep level concentration was considered.

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1. Suvorov, A.V., Ivanov, P.A., Morozenko, Y.V. and Makarov, V.N., Third All-Union Conference on Wide-Gap Semiconductors (in Russian), Mahachkala, 28, (1986).
2. Edmond, J.A., Withrow, S.P., Wadlin, W. and Davis, R.F., in Interfaces, Superlattices and Thin Films, edited by Dow, John D. and Schuller, Ivan K. (Mater. Res. Soc. Proc. 77, Pittsburgh, PA, 1987), pp. 193198.
3. Rybicki, G. C., J. Appl. Phys. 78(5), 2996, (1995).
4. Uddin, A. and Uemoto, T., Jpn. J. Appl. Phys. 34, 3023, (1995).
5. CREE Research Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713, USA.
6. Berman, L.S. and Lebedev, A.A., in Capacitance Deep Level Spectroscopy in Semiconductors, St. Petersburg, Nauka, (1981).
7. Kuznetsov, N.I., Sov. Phys. Semicond, 27, 1674, (1993).
8. Schneider, J. and Maier, K., Physica B 185, 199, (1993).
9. Suttrop, W., Pensl, G., Choyke, W.J., Stein, R. and Leibenzeder, S., J. Appl. Phys. 72, 3708, (1992).
10. Colwell, P.J. and Klein, M.V., Phys. Rev. B 6, 498.
11. Veinger, A.I., Lepneva, A.A., Lomakina, G.A., Mokhov, E.N. and Sokolov, I.V., Soy. Phys. Semicond. 18, 1256, (1984).
12. Anikin, M.M., Lebedev, A.A., Syrkin, A.L. and Suvorov, A.V., Sov. Phis. Semicond. 19(1), 69 (1985).
13. Anikin, M.M., Lebedev, A.A., Popov, I.V., Rastegaev, V.N., Strel’chuk, A.M., Syrkin, A.L., Tairov, Y.M., Tsvetov, V.F. and Chelnokov, V.E., Sov. Phys. Semicond. 22, 181, (1988).

Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

  • Yuri A. Stotski (a1), Igor O. Usov (a1) and Alexander V. Suvorov (a2)

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