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The Dangling Bond in Undoped Amorphous Hydrogenated Silicon: Trap or Recombination Center?

  • M. A. Parker (a1), K. A. Conrad (a1) and E. A. Schiff (a1)


The role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.



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