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A Damage Model for Disordered Structures in Ion Irradiated Silicon

Published online by Cambridge University Press:  17 March 2011

Ju-Yin Cheng  and
J. Murray Gibson
Ju-Yin Cheng
Affiliation:
Department of Materials Science and Engineering, University of Illinois, 104 S. Goodwin Avenue, Urbana, IL 61801, U.S.A
J. Murray Gibson
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, U.S.A
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Abstract

Medium-range order has been observed in ion-implanted amorphous silicon, suggesting a paracrystalline structure for this material. The origin of a paracrystalline structure may be due to an energy spike phenomenon. To evaluate the influence of energy spikes on a particular process, we have attempted to calculate the characteristic energy in a spike. However, the observed depth dependence of amorphous structures in as-implanted silicon is puzzling. To explain this, we simulated the depth distribution of cascade events in a particular energy range. We found a great increase of point defect concentration and cascade events as the depth increases. This result could explain the experimental depth dependence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.1/R9.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Cheng, Ju-Yin, Gibson, J. M., and Jacobson, D. C., J. Mater. Res., to be published.Google Scholar
2. Gibson, J. M., Treacy, M. M. J., Voyles, P. M., Jin, H-C., Abelson, J. A., Appl. Phys. Lett., 23, 3093 (1998).Google Scholar
3. Gibson, J. M., Treacy, M. M. J., Phys. Rev. Lett., 78, 1074 (1997).Google Scholar
4. Treacy, M. M. J., Gibson, J. M., and Keblinski, P., J. Non-Cryst. Solids, 231, 99 (1998).Google Scholar
5. Donovan, E. P., Spaepen, F., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett., 55, 1516 (1989).Google Scholar
6. Roorda, S., Doorn, S., Sinke, W. C., Scholte, P. M. L. O., and Loenen, E. van, Phys. Rev. Lett., 62, 1880 (1989).Google Scholar
7. Sigmund, P., Radia. Eff., 1, 15 (1969).Google Scholar
8. Vineyard, G.H., Radia. Eff., 29, 245 (1976).Google Scholar
9. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, 1996).Google Scholar
10. Ruault, M. O. and Chaumont, J., Penisson, J. M., amd Bourret, A., Philos. Mag., 50, 667 (1984).Google Scholar
11. Lindhard, J., Nielsen, V., and Scarff, M., Mat. Fys. Med. Dan. Vid. Selsk., 36, 14 (1968).Google Scholar