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A Damage Model for Disordered Structures in Ion Irradiated Silicon

  • Ju-Yin Cheng (a1) and J. Murray Gibson (a2)

Abstract

Medium-range order has been observed in ion-implanted amorphous silicon, suggesting a paracrystalline structure for this material. The origin of a paracrystalline structure may be due to an energy spike phenomenon. To evaluate the influence of energy spikes on a particular process, we have attempted to calculate the characteristic energy in a spike. However, the observed depth dependence of amorphous structures in as-implanted silicon is puzzling. To explain this, we simulated the depth distribution of cascade events in a particular energy range. We found a great increase of point defect concentration and cascade events as the depth increases. This result could explain the experimental depth dependence.

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A Damage Model for Disordered Structures in Ion Irradiated Silicon

  • Ju-Yin Cheng (a1) and J. Murray Gibson (a2)

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