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Damage in High Energy Light Ions Irradiated Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

P. Leveque ,
S. Godey ,
P.O. Renault ,
E. Ntsoenzok  and
J.F. Barbot
P. Leveque
Affiliation:
LMP UMR 6630 CNRS, Université de Poitiers, Bd 3-Té1éport 2, F-86960 Futuroscope Cedex
S. Godey
Affiliation:
CNRS-CERI, 3A rue de a Férollerie, 45071 Orléans Cedex, France
P.O. Renault
Affiliation:
LMP UMR 6630 CNRS, Université de Poitiers, Bd 3-Té1éport 2, F-86960 Futuroscope Cedex
E. Ntsoenzok
Affiliation:
CNRS-CERI, 3A rue de a Férollerie, 45071 Orléans Cedex, France
J.F. Barbot
Affiliation:
LMP UMR 6630 CNRS, Université de Poitiers, Bd 3-Té1éport 2, F-86960 Futuroscope Cedex
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Abstract

Commercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 175
Copyright
Copyright © Materials Research Society 1998

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References

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