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Damage Distribution Studies in Proton-Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

H. A. Jenkinson ,
M. O'Tooni ,
J. M. Zavada ,
T. J. Haar  and
D. C. Larson
H. A. Jenkinson
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801
M. O'Tooni
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801
J. M. Zavada
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801
T. J. Haar
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801
D. C. Larson
Affiliation:
Drexel University, Philadelphia, PA 19104
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Abstract

Samples of n+-GaAs implanted with 300 keV protons have been examined using high resolution electron microscopy, capacitance-voltage profilometry, and infrared reflectance. In contrast to previously reported results, electron microscopic examination of the as-implanted samples revealed the presence of dislocation loops and/or precipitates both near the wafer surface and at the bottom of the implanted layer. These results are corroborated by electrical and optical measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 377
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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