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Current State and Future Challenge in HgCdTe MBE Technology

Published online by Cambridge University Press:  22 February 2011

Owen K. Wu
Owen K. Wu*
Affiliation:
Hughes Research Laboratories 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

Significant progress has been made in HgCdTe MBE technology over the last two years. Device quality materials have been grown with the alloy compositions required for short-wavelength infrared (SWIR), 1-3 micron to LWIR (long-wavelength infrared), 8-12 micron applications. Indeed, the observation of low defect density (EPD<2×105/cm2), long minority carrier lifetime and efficient IR photoluminescence attests to the device quality of HgCdTe epilayers grown by MBE. In addition, the breakthroughs to achieve In (N-type) and As (P-type) doping in situ have provided greater flexibilities for fabricating advanced heterojunction devices. High performance IR imaging arrays have been fabricated and IR images were obtained. Also, dual-band detectors and injection infrared diode lasers which have been demonstrated recently are considered. Finally, additional developments and the future challenges in HgCdTe MBE technology are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 565
Copyright
Copyright © Materials Research Society 1994

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