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Current Injection UV-Emission from InAlGaN Multi-Quantum-Well Light-Emitting Diodes

  • A. Kinoshita (a1) (a2), H. Hirayama (a1), M. Ainoya (a1) (a2), J. S. Kim (a1), A. Hirata (a2) and Y. Aoyagi (a1)...

Abstract

InAlGaN quaternary material is very attractive for realizing ultraviolet (UV) emitting devices working at 300 – 350 nm wavelength range. We demonstrate current injection into 340 nm-band InAlGaN based UV light emitting diodes (LEDs), for the first time, fabricated by metal organic vapor phase epitaxy (MOVPE). We performed current injection into AlGaN/AlGaN multi quantum well (MQW), bulk InAlGaN quaternary and InAlGaN/InAlGaN MQW LEDs through Mg-doped AlGaN/GaN superlattice hole conductive layers. The injected current density was ranging 0 – 0.5 kA/cm2 under pulsed or CW operation. The intensity of both photoluminescence (PL) and electroluminescence for InAlGaN quaternary-based LED was much higher than that for AlGaN based LEDs at room temperature. From these results InAlGaN quaternary-based QWs are expected to realize high intensity UV LEDs and LDs.

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Current Injection UV-Emission from InAlGaN Multi-Quantum-Well Light-Emitting Diodes

  • A. Kinoshita (a1) (a2), H. Hirayama (a1), M. Ainoya (a1) (a2), J. S. Kim (a1), A. Hirata (a2) and Y. Aoyagi (a1)...

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