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CuIn(Se,S)2 Absorbers Processed using a Hydrazine-Based Solution Approach

  • Wei Liu (a1), David B. Mitzi (a2), S. Jay Chey (a2) and Andrew Kellock (a3)

Abstract

With tunable bandgap and demonstrated high efficiency, the chalcopyrite CuInSe2 and its alloys have shown great potential as absorbers for single and multi-junction solar cells. However, the current deposition techniques mostly rely on expensive vacuum-based processing or involve complicated precursor solution preparation. These higher-cost absorber preparation processes make it difficult to commercialize this technology. In this work, CuInSe2−xSx (CIS) absorbers are deposited using a simple hydrazine-based solution process. Precursor solutions were prepared by dissolving the component metal chalcogenides and chalcogen in hydrazine, forming homogeneous solutions containing adjustable concentrations of desired elements mixed on a molecular level. These precursor solutions are then spin coated on substrates followed by a heat treatment in an inert environment to produce high quality CIS thin films. Significantly, no post deposition selenization process is required using this technique. Laboratory scale devices with conventional glass/Mo/CIS/CdS/i-ZnO/ITO structure have been fabricated using CIS absorbers deposited via this process. For the baseline low-bandgap CIS system with no Ga added (to compare with our previously reported results with Ga incorporated), AM1.5G conversion efficiency of as high as ∼9% has been achieved for devices with 0.45 cm2 effective area.

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CuIn(Se,S)2 Absorbers Processed using a Hydrazine-Based Solution Approach

  • Wei Liu (a1), David B. Mitzi (a2), S. Jay Chey (a2) and Andrew Kellock (a3)

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