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Cu2ZnSnSe4 from Chemically Deposited Binary Films

  • Enue Barrios-Salgado (a1), José Campos (a1), M. T. S. Nair (a1) and P. K. Nair (a1)

Abstract

Chemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.

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Cu2ZnSnSe4 from Chemically Deposited Binary Films

  • Enue Barrios-Salgado (a1), José Campos (a1), M. T. S. Nair (a1) and P. K. Nair (a1)

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