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Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN

Published online by Cambridge University Press:  01 February 2011

Jayantha Senawiratne ,
Martin Strassburg ,
Adam Payne ,
Ali Asghar ,
William Fenwick ,
Nola Li ,
Ian Ferguson  and
Nikolaus Dietz
Jayantha Senawiratne
Affiliation:
jsenawiratne1@student.gsu.edu
Martin Strassburg
Affiliation:
mstrassb@ece.gatech.edu
Adam Payne
Affiliation:
ampayne@ece.gatech.edu
Ali Asghar
Affiliation:
asghar@ece.gatech.edu
William Fenwick
Affiliation:
fenwick@ece.gatech.edu
Nola Li
Affiliation:
nola@ece.gatech.edu
Ian Ferguson
Affiliation:
ianf@ece.gatech.edu
Nikolaus Dietz
Affiliation:
ndietz@gsu.edu
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Abstract

Optical and structural properties of in situ Cu doped GaN thin films grown on sapphire substrates were optically investigated by means of Raman, photoluminescence (PL), and absorption spectroscopy. Different Cu concentrations in the films were analyzed by secondary ion mass spectroscopy (SIMS) and found to vary from 2×1016 cm-3 to 5×1017 cm-3. Raman studies confirmed high crystalline quality of GaN:Cu with no major structural damages due to Cu incorporation. PL investigation revealed that the origin of the emission around 2.4 eV is most likely due to Cu incorporation. The electrical conductivity of the samples was analyzed by Hall measurements and the found semi-insulating behavior was assigned to the compensation of intrinsic donors by the deep Cu acceptor states.

Keywords

CuopticalGa
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-08
Copyright
Copyright © Materials Research Society 2006

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References

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