Bismuth nanowires 200 nm in diameter were synthesized via electrochemical deposition into the pores of anodic alumina templates. A near neutral pH solution and a special sample holder were employed. Both polycrystalline and (012) oriented bismuth nanowire arrays were prepared. The electrical resistance of the samples versus temperature was measured in the range 2–300 K, and the results were fitted to a transport model. Despite the crystallographic alignment of the nanowire array, the model calculations suggest the dominance of a temperature independent scattering mechanism (such as grain boundary or nanowire boundary scattering). The results are compared to the electrical resistance of nanowires formed by impregnation techniques.