Skip to main content Accessibility help
×
Home

Crystallographically-Oriented Electrochemically-Deposited Bismuth Nanowires

  • Oded Rabin (a1), Gang Chen (a2) and Mildred S. Dresselhaus (a3) (a4)

Abstract

Bismuth nanowires 200 nm in diameter were synthesized via electrochemical deposition into the pores of anodic alumina templates. A near neutral pH solution and a special sample holder were employed. Both polycrystalline and (012) oriented bismuth nanowire arrays were prepared. The electrical resistance of the samples versus temperature was measured in the range 2–300 K, and the results were fitted to a transport model. Despite the crystallographic alignment of the nanowire array, the model calculations suggest the dominance of a temperature independent scattering mechanism (such as grain boundary or nanowire boundary scattering). The results are compared to the electrical resistance of nanowires formed by impregnation techniques.

Copyright

References

Hide All
1. Dresselhaus, M. S. et al., in Recent Trends in Thermoelectric Materials Research III, edited by Tritt, T. M. (Academic Press, San Diego, 2001), p. 1.
2. Piraux, L. et al., J. Mater. Res. 14, 3042 (1999).
3. Liu, K., Chien, C. L., Searson, P. C. and Yu-Zhang, K., Appl. Phys. Lett. 73, 1436 (1998).
4. Zhang, Z. B., Ying, J. Y. and Dresselhaus, M. S., J. Mater. Res. 13, 1745 (1998).
5. Huber, T. E., Celestine, K. and Graf, M. J., Phys. Rev. B 67, 245317 (2003).
6. Heremans, J. et al., Phys. Rev. B 61, 2921 (2000).
7. Rabin, O., unpublished.
8. Lin, Y.-M. et al., Appl. Phys. Lett. 76, 3944 (2000).

Crystallographically-Oriented Electrochemically-Deposited Bismuth Nanowires

  • Oded Rabin (a1), Gang Chen (a2) and Mildred S. Dresselhaus (a3) (a4)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed