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Crystallographic Aspects of Ferroelectric Pzt Thin Films Prepared by Laser Deposition Technique

Published online by Cambridge University Press:  25 February 2011

Winnie Wong-Ng
Affiliation:
National Institute of Standards and Technology, Caithersburg, MD, USA
Ting C. Huang
Affiliation:
IBM Almaden Research Center, San Jose, CA, USA
Lawrence P. Cook
Affiliation:
National Institute of Standards and Technology, Caithersburg, MD, USA
Peter K. Schenck
Affiliation:
National Institute of Standards and Technology, Caithersburg, MD, USA
M.D. Vaudin
Affiliation:
National Institute of Standards and Technology, Caithersburg, MD, USA
Chwan K. Chiang
Affiliation:
National Institute of Standards and Technology, Caithersburg, MD, USA
P.S. Brody
Affiliation:
Harry Diamond Laboratory, Adelphi, MD, USA
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Abstract

X-ray diffraction techniques were used to study the crystallography of PZT thin films prepared by the laser deposition technique. This investigation included identification of phases formed during the annealing process and also the analysis of the profiles of selected diffraction peaks. The PZT films annealed below 800°C typically showed powder x-ray diffraction patterns corresponding to a cubic structure (i.e no peak splitting) instead of the tetragonal patterns characteristic of the target materials. The upper bound contribution of the macro and micro strain to the observed X-ray peak profile and positions was estimated. It was believed that the combined effect of small crystallite size together with residual strain, and possible local inhomogeneity gave rise to the broadening and displacement of the x-ray peaks, which subsequently masked off the splittings. At this stage the physical effect of high temperature annealing is not known. It is possible that as the annealing temperature increased, grain growth took place along with relaxation of residual strain, allowing peak splitting to be observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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