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Crystallization Rate and Thermal Stability of Te-Based Alloy Thin Films for Erasable Optical Recording

Published online by Cambridge University Press:  28 February 2011

R. C. Ross ,
D. A. Strand ,
E. J. Bjornard  and
J. P. Deneufville
R. C. Ross
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. A. Strand
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
E. J. Bjornard
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
J. P. Deneufville
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

Erasure speed and thermal stability of a number of Te-based alloys have been measured and compared. A distinct trend of increasing crystallization temperature, Tx, and increasing minimum time required for crystallization, τx, with increasing crosslinking element content is observed. Films which crystallize to form Te are stability limited at Tx≈80°C for τx≈┐μsec. Films which crystallize to form Sb40Te45Se15 have Tx160°C at τx≈┐μsec. Static tester recrystallization kinetics and direct observation of cycled tracks by optical and electron microscopy indicate that recrystallization occurs via epitaxial growth from peripheral crystallities and not from internally dispersed nuclei for all materials studied. Thus, crystallization speed is limited by three factors: the intrinsic maximum crystallization velocity of the pure crystal, the diffusion rate of crystal-insoluble crosslinking elements away from the crystallization front, and the geometry of the amorphous and peripheral crystalline zones

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 713
Copyright
Copyright © Materials Research Society 1986

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References

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