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Crystallization of Tin-Implanted Amorphous Silicon Thin Films

Published online by Cambridge University Press:  25 February 2011

Fuyu Lin  and
Miltiadis K. Hatalis
Fuyu Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Sherman Fairchild Center for Solid State Studies, Lehigh University, Betldehem, PA 18015
Miltiadis K. Hatalis
Affiliation:
Department of Electrical Engineering and Computer Science, Sherman Fairchild Center for Solid State Studies, Lehigh University, Betldehem, PA 18015
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Abstract

The crystallization of Sn-implanted amorphous silicon was studied as a function of tin implant dose and annealing conditions by transmission electron microscopy. The films were implanted at an energy of 110 keV with a dose in the range of 5 × 1014 to 5×1016 cm−2 and were annealed at a temperature in the range of 450°C to 550°C. An enhanced rate of crystallization in amorphous Si-Sn films compared to the non-implanted amorphous silicon films during thermal annealing was observed. The crystallization process of Si films implanted with tin at a dose of 2.5×1016 cm−2 or less is very similar to unimplanted silicon films except higher nucleation rates and shorter crystallization time were observed with increasing tin dose. Films implanted with tin at a dose of 2.5×1016 cm−2 or more display extremely rapid crystallization (3 hours at 450°C) and very fine grain structure (10 nm); no substantial grain growth has been observed during lurther annealing, but some single crystal-like areas were formed. In-situ annealing of silicon implanted to 5×1016 cm−2 showed that the crystallization process is enhanced by the formation of the liquid tin phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 553
Copyright
Copyright © Materials Research Society 1993

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