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Crystallization behavior of Ge1Cu2Te3 amorphous film

Published online by Cambridge University Press:  01 February 2011

Yuji Sutou ,
Toshiya Kamada ,
Yuta Saito ,
Masashi Sumiya  and
Junichi Koike
Yuji Sutou
Affiliation:
ysutou@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Japan
Toshiya Kamada
Affiliation:
a9tm5309@s.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Miyagi, Japan
Yuta Saito
Affiliation:
b0td5307@s.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Miyagi, Japan
Masashi Sumiya
Affiliation:
b0tm5323@s.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Miyagi, Japan
Junichi Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Miyagi, Japan
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Abstract

The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallizes into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which leads to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250 °C, which is about 70 °C higher than the conventional Ge2Sb2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as the phase change material for PCRAM.

Keywords

amorphousmemoryphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H05-08
Copyright
Copyright © Materials Research Society 2010

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