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Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors

Published online by Cambridge University Press:  15 February 2011

Kwangsoo Choi
Affiliation:
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology, 2–12–2 O-okayama, Meguro-Ku, Tokyo 152, JAPAN, matumura@pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology, 2–12–2 O-okayama, Meguro-Ku, Tokyo 152, JAPAN, matumura@pe.titech.ac.jp
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Abstract

Experimental works have been reviewed on poly-Si/poly-SiCx hetero TFTs aiming at extremely low off-current even under intense light illumination conditions with reasonable field-effect mobility. The results indicated that the hetero TFT having the stacked poly-Si/poly-SiCx layers is promising as a switching device in matrices

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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