Article contents
Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors
Published online by Cambridge University Press: 15 February 2011
Abstract
Experimental works have been reviewed on poly-Si/poly-SiCx hetero TFTs aiming at extremely low off-current even under intense light illumination conditions with reasonable field-effect mobility. The results indicated that the hetero TFT having the stacked poly-Si/poly-SiCx layers is promising as a switching device in matrices
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
REFERENCES
- 3
- Cited by