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Crystallinity and Optoelectronic Properties of μc-SiC:H

  • F. Demichelis (a1), G. Crovini (a1), c. Osenga (a1), C. F. Pirri (a1), E. Tresso (a1) and L. Boarino (a2)...


Samples of μc-Si1-xCx:H with different degree of crystallinity and different carbon content were deposited by Plasma Enhanced Chemical Vapor Deposition and characterized by means of optical, electrical and structural measurements. The correlation between the degree of crystallinity and the mechanism of conductivity and optical transitions in both amorphous and crystalline phases and at the crystalline-amorphous interfaces is reported and discussed in terms of a band structure model.



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