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Crystalline Growth of Wurtzite GaN on (111) GaAs

  • J. Ross (a1), M. Rubin (a2) and T. K. Gustafson (a1)


Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550–600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.



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Crystalline Growth of Wurtzite GaN on (111) GaAs

  • J. Ross (a1), M. Rubin (a2) and T. K. Gustafson (a1)


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