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Crystalline Growth of Wurtzite GaN on (111) GaAs

  • J. Ross (a1), M. Rubin (a2) and T. K. Gustafson (a1)

Abstract

Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550–600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.

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1. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys., 28, L2112 (1989).
2. Nakamura, S., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys., 30, L1708 (1991).
3. Morimoto, Y., Uchiho, K. and Ushio, S., J. Electrochemical Society, 120, 1783 (1973).
4. Lei, T., Fanciulli, M., Molnar, R., Moustakas, T., Graham, R. and Scanlon, J., Appl. Phys. Lett., 59, 944 (1991).
5. Kosicki, B. and Kahng, D., J. Vacuum Science and Tech., 6, 593 (1969).
6. Okura, H., Misawa, S. and Yoshida, S., Appl. Phys. Lett., 59, 1058 (1991).
7. Mizuta, M., Fujieda, S., Matsumoto, Y. and Kawamura, T., Jpn. J. Appl. Phys., 25, L945 (1986).
8. Sasaki, T. and Matsuoka, T., J. Appl. Phys., 64, 4531 (1988).
9. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Crystal Growth, 98, 209 (1989).
10. Martin, G., Strite, S., Thorton, J., Morkoc, H., Appl. Phys. Lett., 58, 2375 (1991).
11. Lakshmi, E., Mathur, B., Bhattacharya, A., and Bhargara, V., Thin Solid Films, 24, 77 (1980).
12. Ross, J., Rubin, M., Mater. Lett., 12, 215 (1991).
13. Ross, J., Masters thesis, University of California Berkeley, 1990.
14. LeGoues, F., Liehr, M., Renier, M. and Krakow, W., Philosophical Magazine B, 57, 179 (1988).
15. Zur, A. and McGill, T., J. Appl. Phys., 55, 378 (1984).
16. Bai, P., Yang, G-R., Lou, L. and Lu, T-M., J. Mater. Res., 5, 989 (1990).

Crystalline Growth of Wurtzite GaN on (111) GaAs

  • J. Ross (a1), M. Rubin (a2) and T. K. Gustafson (a1)

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