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Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

  • M. Levy (a1), R.M. Osgood (a1), A. Kumar (a2), H. Bakhru (a2), R. Liu (a3) and E. Cross (a3)...

Abstract

The epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

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1. Levy, M., Osgood, R. M. Jr, Kumar, A., Bakhru, H., Appl. Phys. Lett. 71, 2617 (1997).
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3. Johnson, W. A., North, J. C., and Wolfe, R., J. Appl. Phys. 44, 4753 (1973).10.1063/1.1662031
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6. Hansen, P., in Proceedings of the International School of Physics Enrico Fermi, edited by Paoletti, A. (North Holland, New York, 1978), p.61.
7. Levy, M., Osgood, R. M. Jr, Kumar, A., and Bakhru, H., J. Appl. Phys. 83, (1998).10.1063/1.367673

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Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

  • M. Levy (a1), R.M. Osgood (a1), A. Kumar (a2), H. Bakhru (a2), R. Liu (a3) and E. Cross (a3)...

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