Skip to main content Accessibility help
×
Home

Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

  • K. Tsujimoto (a1), S. Tsuji (a2), H. Takatsuji (a2), K. Kuroda (a3), H. Saka (a3) and N. Miura (a1)...

Abstract

A rapid and precise sample preparation method using focused ion beam (FIB) etching was developed for cross-sectional transmission electron microscopy (X-TEM) analysis of a thin-film transistor (TFT) fabricated on a glass substrate. Gallium (Ga) ions accelerated at 30 kV and at various incident beam angles were applied during FIB etching to create a uniform thin wall. We successfully prepared X-TEM specimens of long and fragile aluminum (Al) whiskers formed on thin Al films in TFT metallization, where a strong charge is built up during FIB etching. The effect of ion-beam-assisted tungsten deposition prior to FIB etching is discussed. A whisker having a length not exceeding approximately 10 #x00B5;m can be successfully etched to a thickness of 200 nm while keeping its original shape. The performance of this technique is demonstrated in applications to etching at other fragile locations related to TFTs.

Copyright

References

Hide All
1. L Succo, Esposito, J., Cleeves, M., Whitney, S., Lionetti, R. E., and Wichersham, C. E. Jr., J. Vac. Sci. Technol., A 7, 80 (1989).
2. Venkatraman, R., Chen, S., and Braman, J. C., J. Vac. Sci. Technol. A 9, 2536 (1991).
3. Ericson, F., Kristensen, N., Schweitz, J., and Smith, U., J. Vac. Sci. Technol. B 9, 58 (1991).
4. Sanchez, J. E., and Artz, E., Scripta Met. 27, 285 (1992).
5. Schwarzer, R. A., and Gerth, D., J. Electron. Mater. 22, 607 (1993).
6. Hazama, K., Nakamura, Y., and Nittono, O., Jpn. J. Appl. Phys. 27, 1142 (1988).
7. Hinode, K., Homma, Y., and Sasaki, Y., J. Vac. Sci. Technol. A 14, 2570 (1996).
8. Benedict, J. P., Kiepeis, S. J., Vandygrift, W. G., and Anderson, R., EMSA Bulletin 19.2, 74 (1989).
9. Benedict, J. P., Anderson, R., and Klepeis, S. J., Mater. Res. Soc. Proc. 254, 121 (1992).
10. Kirk, E. C. G., Williams, D. A., and Ahmed, H., Inst. Phys. Conf. Ser. 100, 501 (1989).
11. Nikawa, N., J. Vac. Sci. Technol. B 9, 2566 (1991).
12. Morris, S., Tatti, S., Dickson, N., Mendez, H., Schwiesow, B., and Pyle, R., ISTFA 91 Dig., 417 (1991).
13. Szot, J., Hornsey, R., Ohnishi, T., and Minagawa, S., J. Vac. Sci. Technol. B 10, 575 (1992).
14. Tarutani, M., Takai, Y., and Shimizu, R., Jpn. J. Appl. Phys. 31, 1305 (1992).
15. Yamaguchi, A., Shibata, M., and Hashinaga, T., J. Vac. Sci. Technol. B 11, 2016 (1993).
16. Yabuuchi, Y., Extended Abstracts (9th Meeting of Analytical Electron Microscopy), 44 (1993).
17. Pantel, R., Auvert, G., Mascarin, G., and Gonchond, J. P., ICEM 13, 1007 (1994).
18. Saka, H., Kuroda, K., Hong, M. H., Kamino, T., Yaguchi, T., Tsuboi, H., Ishitani, T., Koike, H., Shibuya, A., and Adachi, Y., ICEM 13, 1009 (1994).
19. Ishitani, T., Tsuboi, H., Yaguchi, T., and Koike, H., J. Electron Microsc. 43, 322 (1994).
20. Yamaguchi, A. and Nishikawa, T., J. Vac. Sci. Technol. B 13, 962 (1995).
21. Gignac, L. M., Parrill, T. M., and Chandrashekhar, G. V., Thin Solid Films, 261, 59 (1995).

Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

  • K. Tsujimoto (a1), S. Tsuji (a2), H. Takatsuji (a2), K. Kuroda (a3), H. Saka (a3) and N. Miura (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed