Skip to main content Accessibility help
×
Home

Cpm Measurenents on a-Si:H Based Pin Solar Cells: Thickness and Bias Voltage Effects

  • H. Rübel (a1), M. Gorn (a1), B. Scheppat (a1), R. Geyer (a1), P. Lechner (a1) and N. Kniffler (a1)...

Abstract

We use measurements of subbandgap photocurrent spectra on films, barrier structures and pin cells of different thicknesses to estimate the valence band tailing and to characterize the dangling bond defect region. Large differences in signal sizes in the structures are observed and particularly for thick and thin pin-diodes, the dependence of the signal on voltage bias is discussed. In pin-diodes, these effects can be explained by a change of defect occupation in the i-layer.

Copyright

References

Hide All
/l/ Geyer, R., Gorn, M., Kniffler, N., Lechner, P., Rübel, H. and Scheppat, B., Proc. of the 20th IEEE PVSC Conf.(Las Vegas, 1988) to be published
/2/ Crandall, R.S., Phys. Rev. Lett. 44, 799 (1980)
/3/ Kočka, J., Vaněček, M., Stíka, O., Tring, O. Dung, Stucklík, J. and Tŕíska, A., Proc. of the 8th European PV Solar Energy Conf.(Florence, 1988) 724
/4/ Kida, H., Jamagishi, H., Kamada, T., Okamoto, H., and Hamakawa, Y., Techn. Digest of the Int. PVSEC-l Conf. (Kobe, 1984) 417
/5/ Itozaki, H., Fujita, N., Proc. Mat. Res. Soc. Symp. Vol.95, 507 (1987)
/6/ Hegedus, S.S., Cebulka, J.M., Proc. of the 20th IEEE PVSC Conf. (Las Vegas, 1988) to be published

Cpm Measurenents on a-Si:H Based Pin Solar Cells: Thickness and Bias Voltage Effects

  • H. Rübel (a1), M. Gorn (a1), B. Scheppat (a1), R. Geyer (a1), P. Lechner (a1) and N. Kniffler (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed