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Corrosion Phenomena on the Grain Boundary of AlCu FIlms After Plasma Etching

Published online by Cambridge University Press:  10 February 2011

C. L. Kim ,
K. H. Kwon ,
S. J. Yu ,
H. J. Kim  and
E. G. Chang
C. L. Kim
Affiliation:
Department of electrical engineering, Anyang university, Anyang, 430–714, Korea
K. H. Kwon
Affiliation:
Department of electronic engineering, Hanseo university, Seosan, 356–820, Korea
S. J. Yu
Affiliation:
Semiconductor technology division, ETRI, Yusong P.O. Box 106, Taejon, 305–600, Korea
H. J. Kim
Affiliation:
Department of electrical engineering, Chungang university, Seoul, 156–756, Korea
E. G. Chang
Affiliation:
Department of electrical engineering, Chungang university, Seoul, 156–756, Korea
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Abstract

The effect of grain boundary on the corrosion of Al(Cu 1%) etched using SiCl4/Cl2/He/CHF3 gas plasma has been evaluated with XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscopy) and AES (Auger electron spectroscopy). It was found with SEM that the surface of Al(Cu 1 %) mainly corroded at the grain boundary. Using AES point analysis, the cause of selective corrosion at the grain boundary of Al(Cu 1 %) has been investigated. The results of AES indicated that the contents of F and Cl have made a difference at the analyzed positions. This seems to result from the imperfect crystalline structure of Al(Cu 1%) grain boundary. It was also confirmed that F has passivated the Cl at the grain boundary. The SEM and XPS results implied that Cl incorporated in the grain boundary of polycrystalline Al(Cu 1%) film accelerated the corrosion and could not be easily removed by the subsequent SF6 plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 393
Copyright
Copyright © Materials Research Society 1997

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References

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