Skip to main content Accessibility help

Correlations Between Composition, Texture, and Polarization in SrxBiyTa2O5+x+3y/2 Thin Films Deposited by MOCVD

  • Bryan C. Hendrix (a1), Frank Hintermaieri (a2), Debra A. Desrochers (a3), Jeffrey F. Roeder (a3), Thomas H. Baum (a3), Christine Dehm (a2), Nikolas Nagel (a2), Wolfgang Honlein (a2) and Carlos Mazure (a2)...


SrxBiyTa2O5+x+3y/2 (SBT) is a promising material for ferroelectric random access memories (FeRAM's) because of its inherently high resistance to fatigue and imprint. Metalorganic chemical vapor deposition (MOCVD) offers the ability to produce high quality, conformal SBT films for both high and low density memory applications. An MOCVD process based on liquid delivery and flash vaporization has been developed which allows precise control of film stoichiometry and thickness. In this study, wavelength dispersive x-ray fluorescence and x-ray diffractometry have been used to survey composition and preferred crystallographic orientation (texture) relationships. It is shown that as-deposited film composition can be used to influence the texture of the Aurivillius phase in the annealed film. The polarization of the films increases with increasing (115) and (200)/(020) peak intensity due to the relationship of the electric field direction with the polarization direction in the film. The highest values of polarization are found with Sr content, x<0.8 and Bi content, 2.1 <y<2.6.



Hide All
1 Buskirk, P.C. Van, Roeder, J.F., Baum, T.H., Bilodeau, S.M., Russell, M.W., Johnston, S.T., Carl, R.J., Desrochers, D.A., Hendrix, B.C., Hintermaier, F., Integrated Ferroelectrics 21, 273 (1998).
2 Noguchi, T., Hase, T., Miyasaka, Y., Jpn. J. Appl. Phys. 35, Pt. 1, 4900 (1996); T. Hase, T. Noguchi, K. Amanuma, Y. Miyasaka, Integrated Ferroelectrics 15, 127 (1997).
3 Isobe, C., Hironaka, K., Sugiyama, M., Katori, K., Wanatabe, K., Ikeda, Y., Ami, T., Ochiai, A., Tanaka, M., Asano, K., Yagi, H., presented at the 10th International Symposium on Integrated Ferroelectrics, March 1-4, 1998, Monterey, CA, USA.
4 See for example, Jona, F. and Shirane, G., Ferroelectric Crystals, (Pergamon, Oxford, 1962, reprinted by Dover, Mineola, NY. 1993) p. 275.
5 Koiwa, I., Kanehara, T., Mita, J., Iwabuchi, T., Osaka, T., Ono, S., in Extended Abstracts of the 1996 International Conf On Solid State Devices and Materials, Yokohama, Japan (1996) pp 628630.
6 Buskirk, P.C. Van, Bilodeau, S.M., Roeder, J.F., Kirlin, P.S., Jpn. J. Appl. Phys. 35, Pt. 1, 2520 (1996).
7 Hendrix, B.C., Hintermaier, F., Desrochers, D.A., Roeder, J.F., Bhandari, G., Chappuis, M., Baum, T.H., Buskirk, P.C. Van, Dehm, C., Fritsch, E., Nagel, N., Honlein, W., Mazure, C., in Ferroelectric Thin Films VI, edited by Treece, R.E., Jones, R.E., Foster, C.M., Desu, S.B., Yoo, I.K. (Mater. Res. Soc. Proc. 493, Pittsburgh, PA, 1998) pp. 225230; F. Hintermaier, B. Hendrix, D. Desrochers, J. Roeder, T. Baum, P.C. Van Buskirk, D. Bolton, M. Grossmann, O. Lohse, M. Shumacher, R. Waser, H. Cerva, C. Dehm, E. Fritsch, W. Honlein, C. Mazure, N. Nagel, P. Thwaite, H. Wendt, Integrated Ferroelectrics 21, 367 (1998), Proc. VLSI, Hawaii, June, 1998.
8 Rae, A.D., Thompson, J.G., Withers, R.L., Acta Cryst. B48 418 (1992).
9 Li, Z., Foster, C.M., Dai, X.H., Xu, X.Z., Chan, S.K., Lam, D.J., J. Appl. Phys. 71, 4481 (1992).
10 Smyth, D.M. (private communication).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed