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Correlation Between Surface/Interface States and the Performance of MIS Structures

Published online by Cambridge University Press:  17 March 2011

Hugo M. B. Águas ,
Elvira M.C. Fortunato ,
Ana M. Cabrita ,
Vitor Silva ,
Pedro M.N. Tonello  and
Rodrigo F.P. Martins
Hugo M. B. Águas
Affiliation:
Departamento de Ciência dos Materiais / CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and Cemop-Uninova, 2825-114 Caparica, Portugal
Elvira M.C. Fortunato
Affiliation:
Departamento de Ciência dos Materiais / CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and Cemop-Uninova, 2825-114 Caparica, Portugal
Ana M. Cabrita
Affiliation:
Departamento de Ciência dos Materiais / CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and Cemop-Uninova, 2825-114 Caparica, Portugal
Vitor Silva
Affiliation:
Departamento de Ciência dos Materiais / CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and Cemop-Uninova, 2825-114 Caparica, Portugal
Pedro M.N. Tonello
Affiliation:
Departamento de Ciência dos Materiais / CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and Cemop-Uninova, 2825-114 Caparica, Portugal
Rodrigo F.P. Martins
Affiliation:
Departamento de Ciência dos Materiais / CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and Cemop-Uninova, 2825-114 Caparica, Portugal
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Abstract

In order to understand the kinetics of formation of interface/surface states and its correlation on the final device performance, a preliminary study was performed on MIS structures, before and after surface oxidation/passivation, using different oxidation techniques and oxides: thermal (in air), chemical (in H2O2) and oxygen plasma.

The devices used in this work are based on a glass/Cr/a-Si:H(n+)/a-Si:H(i)/SiOx/Pd structures, where the amorphous silicon intrinsic layer (i a-Si:H) with a photosensitivity of 107 was deposited by a modified plasma enhanced chemical vapour deposition (PECVD) triode system.

The electrical properties of a-Si:H MIS structures were investigated by measuring their diode current-voltage characteristics in the dark and under illumination as well as the spectral response, as a function of the various oxidation techniques. Infrared spectroscopy and spectroscopic ellipsometry were used as a complementary tool to characterise the oxidised surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A12.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Hydrogenated Amorphous Silicon, Solid State Phenomena, 44-46, edit by NeberAeschbacher, Hans (1995) Scitec Publications Google Scholar
2. Fortunato, E., Malik, A., Martins, R., J. Non-Cryst. Solids, 227–230, 1230–1234 (1998)Google Scholar
3. Ganguly, G., Ikeda, T., Sakata, I. and Matsuda, A., Mat. Res. Soc. Symp. Proc., 420, 347–352 (1996).Google Scholar
4. Arimoto, S., Yamamoto, H., Ohno, H., and Hasegawa, H., J. Appl. Phys., 57, 4778–4782 (1985).Google Scholar
5. Queeney, K., Weldon, M., Chang, J., Chabal, Y., Gurevich, A., Sapjeta, J., Opila, R., J. Appl. Phys., 87, 1322–1330 (2000).Google Scholar
6. Fortunato, E., Malik, A., Séco, A., Ferreira, I., Martins, R., J. Non-Cryst. Solids, 227–230, 1349–1353 (1998).Google Scholar