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Correlation Between Resistivity and Yellow Luminescence Intensity of MOCVD-Grown GaN Layers

  • Akihiro Hinoki (a1), Yuichi Hiroyama (a2), Tadayoshi Tsuchiya (a3), Tomoyuki Yamada (a4), Masayuki Iwami (a5), Katsuhiro Imada (a6), Junjiroh Kikawa (a7), Tsutomu Araki (a8), Akira Suzuki (a9) and Yasushi Nanishi (a10)...

Abstract

For further improvements in AlGaN/GaN heterojunction field-effect transistor performance (HFET), it is necessary to reduce the leakage current of the GaN buffer layer. We found a correlation between the leakage current and the intensity of the yellow luminescence of GaN layers taken by UV lamp excitation. The GaN layers were grown by metal organic chemical vapor deposition on SiC substrates. When the samples were excited by a UV (365 nm) lamp, visible yellow luminescence was observed. The leakage current of the GaN buffer layer was measured after deposition of ohmic metal contact. We confirmed clear correlation between the leakage current and the luminescence intensity based from result that the samples with the larger leakage current showed the stronger luminescence intensity. This correlation gives us useful information to understand the drain-source leakage current of AlGaN/GaN HFET.

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Correlation Between Resistivity and Yellow Luminescence Intensity of MOCVD-Grown GaN Layers

  • Akihiro Hinoki (a1), Yuichi Hiroyama (a2), Tadayoshi Tsuchiya (a3), Tomoyuki Yamada (a4), Masayuki Iwami (a5), Katsuhiro Imada (a6), Junjiroh Kikawa (a7), Tsutomu Araki (a8), Akira Suzuki (a9) and Yasushi Nanishi (a10)...

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