Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-20T02:12:31.365Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation Between Photoluminescence Spectral Features and Crystal Growth Temperature for Sige Single Quantum Wells

Published online by Cambridge University Press:  15 February 2011

M. Gerling ,
S. Nilsson ,
H. P. Zeindl  and
U. Jagdhold
M. Gerling
Affiliation:
Institute of Semiconductor Physics, PO Box 409, 15204 Frankfurt (Oder), Germany
S. Nilsson
Affiliation:
Institute of Semiconductor Physics, PO Box 409, 15204 Frankfurt (Oder), Germany
H. P. Zeindl
Affiliation:
Institute of Semiconductor Physics, PO Box 409, 15204 Frankfurt (Oder), Germany
U. Jagdhold
Affiliation:
Institute of Semiconductor Physics, PO Box 409, 15204 Frankfurt (Oder), Germany
Get access

Abstract

Sample temperature dependence and excitation power dependence of the photoluminescence intensity were investigated with respect to growth temperature for SiGe single quantum wells grown pseudomorphically to (100)-oriented Si by molecular beam epitaxy. The determined excitation power exponents and thermal activation energies show unambiguously that defect incorporation is effectively reduced at higher growth temperatures. However, at higher growth temperatures the SiGe-related spectral distribution is found to be shifted to higher photon energy which is attributed to intermixing of Ge and Si at the heterointerfaces, governed by diffusion as well as Ge surface segregation during growth. The diffusion process is studied separately by photoluminescence measurements upon thermal annealing at different temperatures and a diffusion model is presented where the diffusion process is assumed to be composed of two different mechanisms, interdiffusion, i.e. lattice-site-exchange diffusion, and point-defectinduced diffusion. The determined activation energies for the two diffusion mechanisms are in good agreement with previous results which confirm that the model gives a realistic picture of the diffusion process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 399
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sturm, J. C., Manoharan, H., Lenchyshyn, L. C., Thewalt, M. L. W., Rowell, N. L., Noel, J.-P., and Houghton, D. C., Phys. Rev. Lett. 66, 1362 (1991).Google Scholar
2. Zeindl, H. P. and Nilsson, S., J. Appl. Phys. 77, 1753 (1995).Google Scholar
3. Zeindl, H. P., Nilsson, S., and Bugiel, E., Appl. Surf. Sci. to be published 1995.Google Scholar
4. Noël, J.-P., Rowell, N. L., Houghton, D. C., Wang, A., and Perovic, D. D., Appl. Phys. Lett. 6 1, 690 (1992).Google Scholar
5. Wachter, M., Schdffler, F., Herzog, H.-J., Thonke, K. and Sauer, R., Appl. Phys. Lett. 6 3, 376 (1993).Google Scholar
6. Fukatsu, S., Usami, N. and Shiraki, Y, J. Vac. Sci. Technol. B11, 895 (1993).Google Scholar
7. Spitzer, J., Thonke, K., Sauer, R., Kibbel, H., Herzog, H.-J. and Kasper, E., Appl. Phys. Lett. 60, 1729 (1992).Google Scholar
8. Lenchyshyn, L. C., Thewalt, M. L. W., Sturm, J. C., Schwartz, P. V., Prinz, E. J., Rowell, N. L., Nogl, J.-P. and Houghton, D. C., Appl. Phys. Lett. 60, 3174 (1992).Google Scholar
9. Schmalz, K., Yassievich, I. N., Rucker, H., Grimmeiss, H. G., Frankenfeldt, H., Mehr, W., Osten, H. J., Schley, P., and Zeindl, H. P., Phys. Rev. B 50, 14287 (1994).Google Scholar
10. Hollhinder, B., Butz, R., and Mantl, S., Phys. Rev. B 46, 6975 (1992).Google Scholar
11. Kump, M. R. and Dutton, R. W., IEEE Trans. on Computer-aided design 7, 191 (1988).Google Scholar