Hostname: page-component-5c6d5d7d68-xq9c7 Total loading time: 0 Render date: 2024-08-19T22:09:56.953Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation Between Defects and Electrical Conduction in Surface Conductive Layer of CVD-diamond Films

Published online by Cambridge University Press:  15 February 2011

Y. Show ,
F. Matsuoka ,
S. Ri ,
Y. Akiba ,
T. Kurosu ,
M. Iida  and
T. Izumi
Y. Show
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
F. Matsuoka
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
S. Ri
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
Y. Akiba
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
T. Kurosu
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
M. Iida
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
T. Izumi
Affiliation:
Dept. of Electronics, Fac. of Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa, Japan
Get access

Extract

Correlation between defects and electrical conduction in surface conductive layers of CVD diamond films has been studied using electron spin resonance ( ESR ) and two points probe technique methods. The ESR analysis revealed the presence of Pac-center with spin density of 1020 spins/cm3. The Pac-center is composed from two ESR signals: ESR signal from carbon dangling bond with carbon atom neighbors and ESR signal from carbon dangling bond associated with nearest neighbor hole ( hole associated Pac-center ). The hole associated Pac-center is an electrically active defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 681
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Landstrass, M. I. and Ravi, K. V.: Appl. Phys. Lett. 55, 975 (1989)Google Scholar
2. Grot, S. A., Gildenblat, G. S., Hatfield, C. W., Wronski, C. R., Badzian, A. R. and Messier, R.: IEEE Electron Device Lett. 12, 100 (1990)Google Scholar
3. Ri, S. G, Mizumasa, T., Akiba, Y., Hirose, Y., Kurosu, T. and IIda, M.: Jpn. J. Appl. Phys 34, 5550 (1995)Google Scholar
4. Show, Y., Iwase, M. and Izumi, T.: Thin Solid Films 50, 274 (116)Google Scholar
5. Show, Y., Nakamura, Y., Izumi, T., Deguchi, M., Kitabatake, M., Hirao, T., Mori, Y., Hatta, A., Ito, T., Hiraki, A.: Thin Solid Films 281–282, 275 (1996)Google Scholar
6. Aizawa, T., Ando, T., Kamo, M. and Sato, Y.: Phys. Rev. B 48, 18348 (1993)Google Scholar
7. Ando, T., Yamamoto, K., Ishii, M., Kamo, M. and Sato, Y.: J. Chem. Soc. Frans 89, 2685 (1993)Google Scholar
8. Mori, Y., Show, Y., Deguchi, M., Yagi, H., Yagyu, H., Eimori, N., Okada, T., Hatta, A., Nishimura, K., Kitabatake, M., Ito, T., Hirao, T., Izumi, T. and Hiraki, A.: Jpn. J. Appl. Phys. 31, L987 (1993)Google Scholar
9. Nakahata, H., Imai, T. and Fujimori, N.: Proc. of the Second Int. Sympo. on Diamond Material 487 (1991)Google Scholar
10. Maki, T., Shikama, S., Komori, M., Sakaguchi, Y., Sakuta, K. and Kobayashi, T.: Jpn. J. Appl. Phys. 31, L1446 (1992)Google Scholar