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Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

  • Yoshitaka Nakano (a1), Yoshihiro Irokawa (a2), Yasunobu Sumida (a3), Shuichi Yagi (a3) and Hiroji Kawai (a3)...

Abstract

We have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

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Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

  • Yoshitaka Nakano (a1), Yoshihiro Irokawa (a2), Yasunobu Sumida (a3), Shuichi Yagi (a3) and Hiroji Kawai (a3)...

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