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Copper Sulfide Assisted Recrystallization of Cu-poor CuInS2 Observed in-situ by Polychromatic X-ray Diffraction

Published online by Cambridge University Press:  31 January 2011

Humberto Rodriguez-Alvarez
Affiliation:
humberto.rodriguez@helmholtz-berlin.de, Helmholtz Zentrum Berlin für Materialien und Energie, Berlin, Germany
R. Mainz
Affiliation:
roland.mainz@helmholtz-berlin.de, Helmholtz Zentrum Berlin für Materialien und Energie, Berlin, Germany
A. Weber
Affiliation:
alfons.weber@helmholtz-berlin.de, Helmholtz Zentrum Berlin für Materialien und Energie, Berlin, Germany
B. Marsen
Affiliation:
Bjoern.marsen@helmholtz-berlin.de, Helmholtz Zentrum Berlin für Materialien und Energie, Berlin, Germany
H.W. Schock
Affiliation:
hans-werner.schock@helmholtz-berlin.de, Helmholtz Zentrum Berlin für Materialien und Energie, Berlin, Germany
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Abstract

The microstructural changes during heating of bi-layers of Cu-poor CuInS2 and CuS under different sulfur excess conditions were studied. This was done by means of energy dispersive X-ray diffraction of polychromatic synchrotron radiation in a vacuum setup where the sulfur pressure conditions can be controlled. Understood as the formation of a new microstructure, the recrystallization of the Cu-poor CuInS2 phase was characterized by a change in the reflection profile (from Cauchy-type to Gauss-type), the reduction of the breadth and a subsequent normalized-intensity increase of the 112 reflection. The Cauchy component of the breadth was used to monitor the recrystallization under different sulfur and heating rate conditions. The main results are: a) Cu availability for the consumption of the CuIn5S8 phase is a pre-requisite for recrystallization, b) in presence of the Cu2-xS phase, increased sulfur pressure enhances recrystallization.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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