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Copper Laser Induced Chemical Vapor Deposition of al Films

Published online by Cambridge University Press:  26 February 2011

M. I. Yankova ,
W. Shanov  and
B. Ivanov
M. I. Yankova
Affiliation:
Illinois Institute of Technology, Department of Metallurgical and Materials Engineering, Chicago, IL 60616
W. Shanov
Affiliation:
Higher Institute of Chemical Technology, Sofia, Bulgaria
B. Ivanov
Affiliation:
Higher Institute of Chemical Technology, Sofia, Bulgaria
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Abstract

The focused output from a copper laser (λ = 510nm) has been used for direct writing of Al on silicon substrates by pyrolitical decomposition of trimethilaluminum (TMA). These results demonstrate that direct writing can be accomplished at room temperature by a single-step deposition process induced by a single light source. For a laser power density between 5 and 50 kW cm−2, the widths of the stripes varied between 60 and 200 μm with corresponding thickness between 0.5 and 0.8 μm. The width of the stripes proved to be independent of the scanning velocity, Vs, within the range 50 μm s−1 < Vs < 300 μm s−1. The analysis included scanning electron microscopy (SEM) to study the film morphology, a step profiler to evaluate the thicknesses and the profiles of the stripes, and energy dispersive spectroscopy (EDS) to provide their chemical compositions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 433
Copyright
Copyright © Materials Research Society 1991

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References

1. Ehrlich, D.J. and Tsao, J.Y., J. Vac. Sci. Technol. D1, 969 (1983).Google Scholar
2. Bauerle, D., Chemical Processing with Lasers. (Springer, Berlin, 1986).Google Scholar
3. Laser and Particle-Beam Chemical Processing for Microelectronics, edited by Ehrlich, D.J., Higashi, G.S., and Oprysko, M.M. (Mater. Res. Soc. Proc. 101, Pittsburgh, PA 1988).Google Scholar
4. Tsao, J.Y., Ehrlich, D.J., Silversmith, D.J., and Mountain, R.W., IEE Electron. Dev. Lett. EDL–3. 164 (1982).Google Scholar
5. Randall, J.N., Ehrlich, D.J., and Tsao, J.Y., J. Vac. Sci. Technol. B3, 262 (1985).Google Scholar
6. Laser Processing and Diagnostics, edited by Bauerle, D. (Springer, Berlin, 1984).Google Scholar
7. Higashi, G.S. and Fleming, C. G., Appl. Phys. Lett. 48, 1051 (1986).Google Scholar
8. Motooka, T., Gorbatkin, S., Lubben, D., and Greene, J.E., J. Appl. Phys. 58, 4397 (1985).Google Scholar
9. Tsao, J.Y. and Ehrlich, D.J., Appl. Phys. Lett. 245, 617 (1984).Google Scholar
10. Shanov, W., Yankova, M.I., and Ivanov, B., Bulgarian Patent # 76035/1986, Bulgaria.Google Scholar
11. Skouby, D.C. and Jensen, K.F., J. Appl. Phys. 63, 198 (1988).Google Scholar
12. Bouree, J.E. and Flicstein, J. in Laser and Particle Beam Chemical Processing for Microelectronics, edited by Ehrlich, D.J., Higashi, G.S., and Oprysko, M.M. (Mater. Res. Soc. Proc. 101, Pittsburgh, PA 1988) p. 55.Google Scholar