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Copper Film Deposition by Hydrogen Atom Reactions with Copper Compounds
Published online by Cambridge University Press: 25 February 2011
Abstract
A novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.
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- Copyright © Materials Research Society 1991
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