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The Copper Corrosion and Sulfur Contamination Generated by a Three-Step Copper Chemical-Mechanical Polishing Process

  • Chun-Ping Liu (a1), Yen-Shih Ho (a2), Tien-Chen Hu (a3) and Bae-Heng Tseng (a4)

Abstract

This article shows the root cause of Cu corrosion and sulfur contamination due sulfite vapor reflow through drainpipe of load cup to the original three-step Cu CMP equipment. Now, we provide a solution which to modify the arrangement of the drainpipe in original three-step Cu CMP equipment. This is an effective implement for reduction the defects of Cu corrosion and sulfur contamination from long-term observations.

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1 Helneder, H., Korner, H., Mitchell, A., Schwerd, M. and Seidel, U., Microelectronic Engineering 55, 257 (2001)
2 Ritzdorf, T., Chen, L., Fulton, D. and Dundas, C., Proc. IEEE Intl. Interconnect Technol. Conf., 287 (1999).
3 Lakshminarayanan, S., Steigerwald, J., Price, D. T., Bourgeois, M., Chow, T. P., Gutmann, R. J. and Murarka, S. P., IEEE Electron Device Lett. 15, 307 (1994).
4 Guha, S., Sethuraman, A., Gotkis, Y., Kistler, R. and Steckenrider, S., Solid State Technology 44–4, (2001).

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