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The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

  • R. Job (a1), D. Borchert (a1), Y. A. Bumay (a2), W. R. Fahrner (a1), G. Grabosch (a1), I. A. Khorunzhii (a2) and A. G. Ulyashin (a2)...

Abstract

Our experiments show a hydrogen plasma assisted creation of p-n junctions in p-type Cz silicon due to a hydrogen enhanced thermal donor (TD) formation at temperatures ≤450 °C. Applying DC or HF plasma treatments a conversion of p-type into n-type Cz silicon by TD formation occurs. One can distinguish one step processes (p-n junction formation appears just after the plasma exposure) and two step processes (p-n junction formation requires subsequent post hydrogenation annealing). The samples are studied by depth resolved spreading resistance probe (SRP), capacitance-voltage (CV) and Hall measurements. For the one step processes a kinetic model for hydrogen enhanced TD formation is presented.

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The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

  • R. Job (a1), D. Borchert (a1), Y. A. Bumay (a2), W. R. Fahrner (a1), G. Grabosch (a1), I. A. Khorunzhii (a2) and A. G. Ulyashin (a2)...

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