Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-25T08:57:41.576Z Has data issue: false hasContentIssue false

Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate

Published online by Cambridge University Press:  31 January 2011

Guofu Hou
Affiliation:
goufu_hou@yahoo.com.cn, Nankai University, Institute of Photoelectronics, 94#,Weijin Road,Nankai District, Tianjin, 300071, China
Get access

Abstract

High rate deposition of hydrogenated microcrystalline silicon (μc-Si:H) films and solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) process in a high power and high pressure regime. The experiment results demonstrate that in high-rate deposited μc-Si:H films, the structural evolution is much more dramatic than that in low-rate deposited μc-Si:H films. A novel VHF power profiling technique, which was designed by dynamically decreasing the VHF power step by step during the deposition of μc-Si:H intrinsic layers, has been developed to control the structural evolution along the growth direction. Another advantage of this VHF power profiling technique is the reduced ion bombardments on growth surface because of decreasing the VHF power. Using this method, a significant improvement in the solar cell performance has been achieved. A high conversion efficiency of 9.36% (Voc=542mV, Jsc=25.4mA/cm2, FF=68%) was obtained for a single junction μc-Si:H p-i-n solar cell with i-layer deposited at deposition rate over 10 �/s.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mai, Y. Klein, S. Carius, R. Wolff, J. Lambertz, A. Finger, F. and Geng, X. Journal of Applied Physics, 97, 2005, 114913 Google Scholar
2 Droz, Corinne, Ph.D Thesis, Université de Neuchâtel, Swiss, 2003 Google Scholar
3 Gordijn, Aad, PhD Thesis, Utrecht University, The Netherland, 2005 Google Scholar
4 Brammer, T. and Stiebig, H. Journal of Applied Physics, 94, 1035 (2003)Google Scholar
5 Roschek, T. Repmann, T. Müller, J., Rech, B. Wagner, H. Proc. of 28th IEEE Photovoltaic Specialists Conference, Anchorage, AK, Sep. 15-22, 150 (2000)Google Scholar
6 Yan, B. Yue, G. Yang, J. Yang, J. Guha, S. Williamson, D.L. and Jiang, C. Appl. Phys. Lett. 85, 1955 (2004)Google Scholar
7 Gu, J. Zhu, M. Wang, L. Liu, F. Zhou, B. Zhou, Y. Ding, K. and Li, G. Journal of Applied Physics. 98, 093505 (2005)Google Scholar
8 Niikura, C. Brenot, R. Guillet, J. Bourée, Jean-Eric, Thin Solid Films 516, 568 (2008)Google Scholar
9 Yan, B. Yue, G. Yan, Y. Jiang, C. Teplin, C. W. Yang, J. and Guha, S. Mater. Res. Soc. Symp. Proc. Vol. 1066, 2008 Spring Meeting, 1066-A03-03Google Scholar
10 Vetterl, O. Lambertz, A. Dasgupta, A. Finger, F. Rech, B. Kluth, O. Wagner, H. Solar Energy Materials & Solar Cells 66, 345 (2001)Google Scholar
11 Yan, B. Yue, G. Yang, J. Banerjee, A. and Guha, S. Mat. Res. Soc. Symp. Proc. Vol. 762, 2003 Spring Meeting, A4.1.1Google Scholar
12 Hou, G. Han, X. Li, G. Zhang, X. Cai, N. Wei, C. Zhao, Y. Geng, X. Technical Digest of the 17th International Photovoltaic Science and Engineering Conference, Dec. 2007, Fukuoka Japan, 11121113 Google Scholar
13 Kalache, B. Kosarev, A. I., Vanderhaghen, R., Roca, P.. Cabarrocas, I. Journal of Applied Physics, 93(2), 1262 (2003)Google Scholar
14 Kondo, M. Fukawa, M. Guo, L. Matsuda, A. J. Non-Cryst. Solids 266–269, 84 (2000)Google Scholar
15 Das, U. K. Centurioni, E. Morrison, S. Madan, A. Proceedings of 3rd World Conference Photovoltaic Energy Conversion, 12-16 May 2003, 17761779 Google Scholar
16 Li, G. Hou, G. Han, X. Yuan, Y. Wei, C. Sun, J. Zhao, Y. and Geng, X. Chinese Phys. B 18 (4), 1674 (2009)Google Scholar