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Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-assembled Monolayers

Published online by Cambridge University Press:  28 July 2011

Rong Chen ,
Hyoungsub Kim ,
Paul C. McIntyre  and
Stacey F. Bent
Rong Chen
Affiliation:
Department of Chemistry, Stanford University, Stanford, California 943052
Hyoungsub Kim
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, California 94305
Paul C. McIntyre
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, California 94305
Stacey F. Bent
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, California 94305
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Abstract

A series of self-assembled molecules have been investigated as deactivating agents for the HfO2 atomic layer deposition (ALD). Three important factors of self-assembled monolayers (SAMs) deactivating efficiency towards ALD--chain length, reactivity and steric effect--have been investigated and discussed as well as the initial blocking mechanism of this process. This investigation shows that in order to achieve satisfactory deactivation, it is crucial to choose high reactivity, low steric effect molecules with certain chain length to form condensed, high hydrophobic organic monolayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.3
Copyright
Copyright © Materials Research Society 2004

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References

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