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Controlled Stress Refractory Metallizations

Published online by Cambridge University Press:  21 March 2011

Ilan Golecki  and
Margaret Eagan
Ilan Golecki
Affiliation:
Phone (973) 455-4938; Fax (973) 455-4339; e-mail: ilan_golecki@ieee.org
Margaret Eagan
Affiliation:
Honeywell International Inc. (formerly AlliedSignal Inc.), Corporate Advanced Materials and Devices Laboratory, 101 Columbia Road, Morristown, NJ 07962.
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Abstract

Rhodium and iridium are highly electrically conductive refractory metals, which can be used as current-carrying thin-film metallizations. Their chemical inertness further enables their application at relatively high temperatures. However, due to the high elastic modulus of such metals, a residual tensile stress of 300 to 400 MPa is measured in evaporated thin films. We present novel results evidencing complete control over both the magnitude and the sign of the residual stress in such refractory thin films. The metallic layers are deposited by means of ion-beam-enhanced physical vapor deposition and both electrical resistivity and stress are controlled. Controlling the stress in this manner has enabled achieving thicker films and films with near-zero residual stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L13.8.1
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Golecki, Ilan and Eagan, Margaret, in Thin Films – Stresses and Mechanical Properties VIII, edited by Vinci, R., Kraft, O., Moody, N., Besser, P. and Shaffer, E. II, Mater. Res. Soc. Proc. 594, pp.105–110 (1999).Google Scholar
2. Golecki, Ilan and Eagan, Margaret, U.S. Patent Number 6,291,345 B1 (Sep. 18, 2001).Google Scholar
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