Skip to main content Accessibility help
×
Home

Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION

  • C.C. Theron (a1), A. Falepin (a1), S. Degroote (a1), J. Dekoster (a1), A. Vantomme (a1), G. Langouche (a1), H.S. De Waal (a2) and R. Pretorius (a2)...

Abstract

By analogy to reactive deposition epitaxy and titanium interlayer mediated epitaxy experiments, an attempt has been made to constrain the supply of reactants to the reaction interface in the solid phase reaction between Fe and Si. The goal being to change the normal phase formation sequence by using a suitable diffusion barrier, so that β-FeSi2 forms directly. Both Fe-V and Fe-Zr diffusion barriers were used to constrain the supply of the two reactants during Fe-silicide formation. Measurements with these barriers, show first phase formation of β-FeSi2, but direct formation of 3-FeSi2 as first phase has not been observed. In the case of the Fe-V diffusion barrier it was shown that the use of the diffusion barrier resulted in smoother layers of β-FeSi2 than could be formed by direct reaction of Fe on Si. In the case of the Fe-Zr barrier it is found that the barrier fails structurally at high temperatures. While it does prohibit Fe diffusion at low annealing temperatures, significant Si diffusion occurs prior to ε-FeSi formation.

Copyright

References

Hide All
[1] Pretorius, R., Theron, C.C., Vantomme, A. and Mayer, J.W., Critical Reviews in Sol. State and Mater. Sci. 24, 1 (1999).
[2] Ottaviani, G., Thin Solid Films 140, 3 (1986).
[3] Kao, Y.C., Tejwani, M., Xie, Y.H., Lin, T.L. and Wang, K.L., J. Vac. Sci. Technol. B3, 596 (1985).
[4] Alvarez, J., Hinarejos, J.J., Michel, E.G., Gallego, J.M., de Parga, A.L.V., de la Figuera, J., Ocal, C. and Miranda, R., Appl. Phys. Lett. 59, 99 (1991).
[5] Vantomme, A., Degroote, S., Dekoster, J., Bender, H. and Langouche, G. in Silicide Thin Films-Fabrication, Properties and Applications, edited by Tung, R.T. (Mater. Res. Soc. Proc. 402, Pittsburgh, PA, 1986) p. 505.
[6] Dass, M.L.A., Fraser, D.B. and Wei, C-S., Appl. Phys. Lett. 58, 1308 (1991).
[7] Pretorius, R., Marais, T.K. and Theron, C.C., Mater. Sci. Eng. R10, 1 (1993).
[8] Pretorius, R. in Thin Films and Interfaces II, edited by Baglin, J.E.E., Campbell, D.R. and Chu, W.K. (Mater. Res. Soc. Proc. 25, Elsevier Science, NY, 1984) p. 15.
[9] Pretorius, R. and Mayer, J.W., J. Appl. Phys. 81, 2448 (1997).
[10] Vantomme, A., Degroote, S., Dekoster, J., Langouche, G. and Pretorius, R., Appl. Phys. Lett. 74, 3137 (1999).
[11] Jaouen, C, Michel, A., Pacaud, J., Dufour, C., Bauer, Ph. and Gervais, B., Nucl. Instr. Meth. B148, 176 (1999).
[12] Schuler, T. (private communication).

Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION

  • C.C. Theron (a1), A. Falepin (a1), S. Degroote (a1), J. Dekoster (a1), A. Vantomme (a1), G. Langouche (a1), H.S. De Waal (a2) and R. Pretorius (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.