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Controlled growth of nanowires using annealing and pulsed laser deposition

  • Hyun D. Park (a1) and Timothy P. Hogan (a1)

Abstract

A new nanowire growth technique using annealing and pulsed laser deposition is described. The technique demonstrates the control in the precise nanowire growth temperature thereby yielding higher quality nanowires than obtained from simple annealing alone. InSb substrate and gold target were used to demonstrate the new technique. The results from the variation of gold deposits from 2.5 mins to 40 mins at the fixed growth temperature of 510 °C are discussed.

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Controlled growth of nanowires using annealing and pulsed laser deposition

  • Hyun D. Park (a1) and Timothy P. Hogan (a1)

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