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Controlled Growth and Electronic Properties of Gallium Nitride Nanowires

  • Song Han (a1), Wu Jin (a1), Tao Tang (a1), Chao Li (a1), Daihua Zhang (a1), Xiaolei Liu (a1) and Chongwu Zhou (a1)...

Abstract

High-quality single crystalline gallium nitride (GaN) nanowires are synthesized via a chemical vapor deposition (CVD) method using gold nanoparticles as the catalyst. This method enables control over several important aspects of the growth, including control of the nanowire diameter by using mono-dispersed gold clusters, control of the nanowire location via e-beam patterning of the catalyst sites, and control of the nanowire orientation via epitaxial growth on aplane sapphire substrates. Transport properties of these GaN nanowires are studied. Our work opens up new ways to use GaN nanowires as nano-building blocks.

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Controlled Growth and Electronic Properties of Gallium Nitride Nanowires

  • Song Han (a1), Wu Jin (a1), Tao Tang (a1), Chao Li (a1), Daihua Zhang (a1), Xiaolei Liu (a1) and Chongwu Zhou (a1)...

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