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Control of Valence States by a Codoping Method in P-Type GaN Materials

Published online by Cambridge University Press:  10 February 2011

T. Yamamoto  and
H. Katayama-Yoshtoa
T. Yamamoto
Affiliation:
Department of Condensed Matter Physics, Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki 567, Japan, tetsu36@sanken.osaka-u.ac.jp Department of Computational Science, Asahi Chemical Industry Co., Ltd., 2–1 Samejima, Fuji 416, Japan
H. Katayama-Yoshtoa
Affiliation:
Department of Condensed Matter Physics, Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki 567, Japan, tetsu36@sanken.osaka-u.ac.jp PRESTO, Japan Science and Technology Corporation, Kawaguchi, Saitama 332, Japan
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Abstract

We propose a new valence control method, the “codoping method (using both n- and p-type dopants at the same time)”, for the fabrication of low-resistivity p-type GaN crystals based on the ab-initio electronic band structure calculations. We have clarified that while doping of acceptor dopants, BeGa and MgGa, leads to destabilization of the ionic charge distributions in p-type GaN crystals, doping of Sica or ON give rise to p-type doped GaN with high doping levels due to a large decrease in the Madelung energy. The codoping of the n- and p-type dopants (the ratio of their concentrations is 1:2) leads to stabilization of the ionic charge distribution inp-type GaN crystals due to a decrease in the Madelung energy, to result in an increase in the net carrier densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 105
Copyright
Copyright © Materials Research Society 1997

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References

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