Skip to main content Accessibility help

Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

  • M. Sumiya (a1), T. Ohnishi (a2), M. Tanaka (a3), A. Ohtomo (a3), M. Kawasaki (a3), M. Yoshimoto (a2), H. Koinuma (a2), K. Ohtsuka (a4) and S. Fuke (a1)...


Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.



Hide All
[1] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Appl. Phys. Lett. 68, 2105 (1996)
[2] Hellman, E.S.; MRS Internet J. Nitride Semicond. Res. 3, 11 (1998)
[3] Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Crys. Growth 98, 209 (1989)
[4] Keller, S., Keller, B. P., Wu, Y.-F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K. and DenBaars, S. P.; Appl. Phys. Lett. 68, 1525 (1996)
[5] Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T. and , Minagawa; J. Appl. Phys. 79, 3487 (1996)
[6] Bolan, Y., Fini, P., DenBaars, S. P. and Speck, J. S.; Jpn. J. Appl. Phys. 37, 4695 (1998)
[7] Fuke, S., Teshigawara, H., Kuwahara, K., Takano, Y., Ito, T. Yanagihara, M. and Ohtsuka, K.; J. Appl. Phys. 83, 764 (1998)
[8] Sumiya, M., Ohnishi, T., Tanaka, M., Ohtsuka, K. Ohkubo, I., Kawasaki, M., Yoshimoto, M. Koinuma, H. and Fuke, S.; Submitted to Appi. Phys. Lett.
[9] Ohnishi, T., Ohtomo, A., Kawasaki, M., Takahashi, K., Yoshimoto, M. and Koinuma, H., Appl. Phys. Lett. 72, 824 (1998)
[10] Sumiya, M., Ohnishi, T., Hesigawara, H., Tanaka, M., Ohkubo, I., Kawasaki, M., Yoshimoto, M., Ohtsuka, K., Koinuma, H. and Fuke, S.; Proc. of 2nd Intern. Symp. on Blue laser and Light Emitting Diodes, Chiba Japan, 339 (1998)
[11] Yamamoto, A., Tsujino, M., Ohkubo, M. and Hashimoto, A.; J. Crys. Growth 137, 415 (1994)
[12] Shimizu, S. and Sonoda, S.; Private communication, 2nd Intern. Symp. on Blue laser and Light Emitting Diodes, Chiba Japan (1998)
[13] Yamane, H., Shimada, M., Endo, T. and DiSalvo, F. J.; Jpn. J. Appl. Phys. 37, 3436(1998)
[14] Shimizu, S., Suzuki, Y., Nishihara, T., Hayashi, S. and Shinohara, M.; Jpn. J. Appl. Phys. 37, L703 (1998)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed