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Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

Published online by Cambridge University Press:  15 February 2011

M. Sumiya ,
T. Ohnishi ,
M. Tanaka ,
A. Ohtomo ,
M. Kawasaki ,
M. Yoshimoto ,
H. Koinuma ,
K. Ohtsuka  and
S. Fuke
M. Sumiya
Affiliation:
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku Hamamatsu, 432-8561, Japan
T. Ohnishi
Affiliation:
Materials and Structures Laboratory
M. Tanaka
Affiliation:
Department of Innovative and Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Yokohama, 226-8502, Japan
A. Ohtomo
Affiliation:
Department of Innovative and Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Yokohama, 226-8502, Japan
M. Kawasaki
Affiliation:
Department of Innovative and Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Yokohama, 226-8502, Japan
M. Yoshimoto
Affiliation:
Materials and Structures Laboratory
H. Koinuma
Affiliation:
Materials and Structures Laboratory
K. Ohtsuka
Affiliation:
Research and Development Division, Sanken Electric Co. Ltd., 3-6-3 Kitano Niiza, 352-8666, Japan
S. Fuke
Affiliation:
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku Hamamatsu, 432-8561, Japan
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Abstract

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.23
Copyright
Copyright © Materials Research Society 1999

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