Skip to main content Accessibility help
×
Home

Control of Si-SiO2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

  • G. Lucovsky (a1), T. Yasuda (a1), Y. Ma (a1), S.V. Hattangady (a1), X-L Xu (a1), V. Misra (a1), B. Hornung (a1) and J.J. Wortman (a1)...

Abstract

This paper describes the preparation of silicon-based metal oxide semiconductor, MOS, devices, capacitors and field effect transistors, FETs, using deposited oxide dielectrics. A critical aspect of the device fabrication process is the way the Si-SiO2 interface is formed; e.g., either before, during, or after the oxide deposition. We have studied different methods of fabricating Si-SiO2 heterostructures, and have concluded that the implementation of independently controllable and sequential process steps for (i) interface formation, and (ii) oxide deposition consistently yields MOS devices with electrical properties that are superior to those of devices fabricated under other processing conditions which include specifically interface formation during the oxide deposition.

Copyright

References

Hide All
1 Lo, G.Q., Ting, W.C., Shih, D.K., and Kwong, D.L., Appl. Phys. Lett. 56, 979 (1990).
2 X-L, Xu, Kuehn, R.T., Wortman, J.J. and Ozturk, M.C., Appl. Phys. Lett. 60, 3063 (1992).
3 Batey, J. and Tierney, E., J. Appl. Phys. 60, 3136 (1986).
4 Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).
5 Fountain, G.G., Rudder, R.A., Hattangady, S.V., Markunas, R.J., and P.S, Lindorme,
6 Lucovsky, G., Yi, Ma, Yasuda, T., Silvestre, C. and Hauser, J.R., Jpn. J. Appl. Phys. 31, 4387 (1992).
7 Lucovsky, G., Kim, S.S., Tsu, D.V., Fountain, G.G. and Markunas, R.J., J. Vac. Sci. Technol. B7, 861(1989).
8 Kim, S.S., Stephens, D.J., Lucovsky, G., Fountain, G.G. and Markunas, R.J., J. Vac. Sci. Technol. A8, 2039 (1990).
9 Fountain, G.G., Hattangady, S.V., Rudder, R.A., Lucovsky, G., Kim, S.S. and Tsu, D.V., J. Vac. Sci. Technol. A7, 576 (1989).
10 Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., J. Vac. Sci. Technol. B10, 1844 (1992).
11 Misra, V., Hattangady, S.V., X-L, Xu, Watkins, M.J., Hornung, B., Lucovsky, G., Wortman, J.J., Emmerichs, U., Meyer, C., Leo, K., and Kurz, H., presented at European MRS Meeting, Strasbourg, France, May 1993, and to be published in the symposium proceedings.
12 Hattangady, S.V., Misra, V., Yasuda, T., X-L, XU, Hornung, B., Lucovsky, G. and Wortman, J.J., J. Vac. Sci. Technol. A12 (1994), submitted for publication.
13 The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Ed. by Helms, C.R. and Deal, B.E., (Plenum Press, New York, 1988), Chapters 1-4.
14 The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Ed. by Helms, C.R. and Deal, B.E., (Plenum Press, New York, 1993), Chapter 1
15 Lucovsky, G., Tsu, D.V., Rudder, R.A. and Markunas, R.J., in Thin Film Processes II, Ed. by Vossen, J.L. and Kern, W. (Academic Press, Boston, 1991), p. 565.
16 Bjorkman, C.H., Shearon, C.E. Jr., Ma, Yi, Yasuda, T., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K. and Kurz, H., J. Vac. Sci. Technol. A11, 964 (1993); C.H. Bjorkman, T. Yasuda, C.E. Shearon, Jr., G. Lucovsky, U. Emmerichs, C. Meyer, K. Leo and H. Kurz, J. Vac. Sci. Technol. B11, 1521 (1993).
17 Nicollian, E.H. and Brews, J.R., in MOS Physics and Technology, (John Wiley and Son, New York, 1982).
18 Milnes, A.G., Semiconductor Devices and Integrated Electronics, (Van Nostrand Reinhold, New York, 1980), Chapter 7.
19 Bhattacharyya, A. and Vorst, C., J. Electrochem. Soc. 132, 1900 (1985), and numberous references cited in Refs. 13 and 14.
20 Hauser, J.R. and Wortman, J.J., unpublished results.
21 Ma, Y., Yasuda, T., Habermehl, S. and Lucovsky, G., J. Vac. Sci. Technol. B11, 1533 (1993).
22 Ma, Y. and Lucovsky, G., Vac, J.. Sci. Technol. B12 (1994), submitted for publication.

Control of Si-SiO2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

  • G. Lucovsky (a1), T. Yasuda (a1), Y. Ma (a1), S.V. Hattangady (a1), X-L Xu (a1), V. Misra (a1), B. Hornung (a1) and J.J. Wortman (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed