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Control of Optical and Electrical Properties of ZnO Films for Photovoltaic Applications

  • Ralf Hunger (a1), Kakuya Iwata (a1), Paul Fons (a1), Akimasa Yamada (a1), Koji Matsubara (a1), Shigeru Niki (a1), Ken Nakahara (a2) and Hidemi Takasu (a2)...

Abstract

ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10−4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10−4Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

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Control of Optical and Electrical Properties of ZnO Films for Photovoltaic Applications

  • Ralf Hunger (a1), Kakuya Iwata (a1), Paul Fons (a1), Akimasa Yamada (a1), Koji Matsubara (a1), Shigeru Niki (a1), Ken Nakahara (a2) and Hidemi Takasu (a2)...

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