Skip to main content Accessibility help
×
Home

Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment

  • Jennifer E. Gerbi (a1), Paul. M. Voyles (a2) (a3), Michael M. J. Treacy (a3), J. Murray Gibson (a4), Wangchun Chen (a5), Brent J. Heuser (a5) and J. R. Abelson (a1)...

Abstract

We have observed the existence of medium range order via fluctuation microscopy in amorphous silicon grown at 230°C. We hypothesize that this structure develops during the highly non-equilibrium growth process; high densities of ordered surface nuclei are produced which are subsequently buried and forced into an unfavorable energy state. These nm sized regions are distorted in the bulk due to strain, but remain topologically crystalline. In this work, we alter the growth energetics both at the surface and sub-surface during magnetron sputter film deposition with two kinds of particle bombardment, respectively: a controllable flux of low-energy (20eV) Ar+ ions, and higher energy (100eV) D vs. H neutrals. With this method, we demonstrate for the first time control over the intensity of this medium-range structural order at a constant substrate temperature as seen primarily with fluctuation electron microscopy, but also Raman scattering, spectroscopic ellipsometry, and SAXS. We suggest that these bombardments can increase adspecie surface mobility or drive local sub-surface restructuring (“kinetic annealing”), thus increasing or decreasing the size, density and/or strength of the ordered regions.

Copyright

References

Hide All
1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).10.1063/1.89674
2. Schropp, R. E. I., Zeman, M., Amorphous and Microcrystalline Silicon Solar Cells, (Kluwer Academic Publishers, Dordrecht, 1998).
3. Gibson, J. M., Treacy, M. M. J., Voyles, P. M., Jin, H-C. and Abelson, J. R., Appl. Phys. Lett. 73, 3093 (1998).
4. Voyles, P. M., Gibson, J. M., Treacy, M. M. J., J. Electron Microscopy 49, 259 (2000).
5. Voyles, P. M., Zotov, N., Nakhmanson, S. M., Drabold, D. A., Gibson, J. M., Treacy, M. M. J., and Keblinski, P., to be submitted.
6. Nakhmanson, S. M., Boyles, P. M., Mousseau, N., Barkema, G. T., Drabold, D. A., in press, Phys. Rev. B (2001).
7. Gibson, J. M., Treacy, M. M. J., Keblinski, P. J., J. Non-Cryst. Solids 231, 99 (1998).
8. Treacy, M. M. J., Voyles, P. M., Gibson, J. M., J. Non-Cryst. Sol. 266–269, 150 (2000).
9. Gibson, J. M. and Treacy, M. M. J., Phys. Rev. Letts. 78, 1074 (1997)10.1103/PhysRevLett.78.1074
10. Voyles, P. M., Gerbi, J. E., Treacy, M. M. J., Gibson, J. M., Abelson, J. R., J. Non-Cryst. Solids, in press (2001).
11. Voyles, P. M., Gerbi, J. E., Treacy, M. M. J., Gibson, J. M., Abelson, J. R., submitted (2001).
12. Gerbi, J. E. and Abelson, J. R., Mat. Res. Soc. Symp. Proc 609 (2000).
13. Rabalais, J. W., Al-Bayati, A. H., Boyd, K. J., Marton, D., Kulik, J., Zhang, Z., Chu, W. K., Phys. Rev. B 53, 10781 (1996).10.1103/PhysRevB.53.10781
14. Gerbi, J. E. and Abelson, J. R., J. Appl. Phys. 89, 1463 (2001).10.1063/1.1334639
15. Gerbi, J.E. and Abelson, J.R., to be submitted.
16. Voyles, P. M., Treacy, M. M. J., Jin, H-C., Abelson, J. R., Gibson, J. M., Yang, J., Guha, S., and Crandall, R. S., Mat. Res. Soc. Symp. Proc. 609, (2000).10.1557/PROC-609-A2.4
17. Lannin, J. S., in Semiconductors and Semimetals, Vol. 21, Hydrogenated Amorphous Silicon, Part B, Optical Properties (Pankove, J. I., Willardson, R. K., Beer, A. C., eds.) (Academic Press, Inc. 1984).
18. Gibson, J. M. and Treacy, M. M. J., Phys. Rev. Letts 78, 1074 (1997)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed